The effective surface charge density in passive lead borosilicate glass coa
tings on a semiconductor surface was determined by the isothermal capacitan
ce relaxation measurements. It was found that an increase in the temperatur
e of coating formation is accompanied by increase in the effective surface
charge density. This relationship is explained by the growth in concentrati
on of the charge trapping centers with increasing content of a crystalline
phase in the bulk of glass. (C) 2001 MAIK "Nauka/Interperiodica".