Hundred MeV heavy ion irradiation effect on boron diffusion in Si

The results of experimental study of boron (140 keV, 2 x 10(15) cm(-2)) dep th profiles and electrical activation processes in silicon after irradiatio n with 305 MeV Kr (10(12) cm(-2)) and 710 MeV Bi (10(11) and 10(12) cm(-2)) ions during post-radiation furnace annealing have been presented. It was f ound that there is no difference in boron depth distribution in reference a nd high-energy ion irradiated samples before the heat treatment. The effect of 100 MeV ion irradiation reveals in the shift of boron depth distributio n towards the depth of the material and significant decrease in electrical activation of dopants. The difference in dynamics of boron activation in re ference and high-energy heavy ion irradiated silicon samples is attributed to the formation of stable defect clusters in ion track range. (C) 2001 Els evier Science Ltd. All rights reserved.