Formation of device isolation in GaAs with polyenergetic ion implantation

A method of the formation of device isolation in III-V semiconductors is co nsidered. The method is based on the creation of a uniform concentration of radiation defects by polyenergetic ion implantation. A numerical model as well as a computer program have been developed which enabled us to find opt imal energy and dose sets for polyenergetic ion implantation, necessary to form high-quality insulating layers. Experiments on the formation of isolat ion in GaAs have been carried out. The electric properties and the thermal stability of the implanted regions have been investigated. (C) 2001 Elsevie r Science Ltd. All rights reserved.