Gettering of metal impurities to cavities formed by hydrogen and helium implantation in silicon

Implantation conditions necessary to form a sub-surface depth layer contain ing cavities by H+ and He+ implantation into Si were determined and discuss ed. Ion energy and fluence in the two cases were chosen to meet the criteri a necessary to form a gettering layer located deeper than the active region s in submicro devices. The results obtained allowed us to determine that un der specified conditions for H+ and He- implantation into Si, a rather thic k (Deltaz similar to 0.3-0.4 mum) layer can be formed which contains the im purity gettering sites. The gettering behaviour for several transition meta ls, such as Au, Cu, Co and Fe was discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.