Monte Carlo modeling of the IBAD growth of the optical films

A Monte Carlo simulation model of the ion-assisted deposition process has b een used in order to investigate the influence of some parameters on the fi nal optical quality of the thin films. The simulations were performed on a simple cubic lattice with the ballistic deposition of particles. The mechan ism of internal rearrangements of deposited adatoms has been introduced int o the model. The results show that the angle of the ion beam as well as the kinetic energy of particles and ion-to-atom arrival ratio play an importan t role in the quality of the deposited films. The influence of these parame ters on morphology of the films has also been discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.