Damage evolution and track formation in crystalline InP and GaAs during swift Kr and Xe ion irradiation

GaAs and InP wafers were irradiated by swift Kr+ and Xe+ with various ion f luences. The implantation was carried out at liquid nitrogen temperature (L NT), room temperature (RT) and higher temperature. Then the samples were in vestigated by means of the cross-section transmission electron microscopy ( XTEM) as well as Rutherford backscattering (RBS) and selective chemical etc hing/microscopy (SCEM) techniques. GaAs and InP appeared to have a differen t character of defect accumulation with the ion dose. XTEM studies allowed identification of amorphous track formation in InP. Microparticles of wurtz ite InP phase were found in some tracks. A new approach to describe the abo ve mentioned effect was discussed. It is suggested that both fast heating a nd quenching of local excited regions along ion paths result in imperfect l ocal recrystallization and, therefore, are responsible for track formation. (C) 2001 Elsevier Science Ltd. All rights reserved.