Analysis of the electron transport phenomena in HTSC-materials as the method of studying the band spectrum and its transformation under doping by different impurities

Authors
Gasumyants, VE
Citation
Ve. Gasumyants, Analysis of the electron transport phenomena in HTSC-materials as the method of studying the band spectrum and its transformation under doping by different impurities, ADVANCES IN CONDENSED MATTER AND MATERIALS RESEARCH, VOL 1, 2001, pp. 135-200
Categorie Soggetti
Current Book Contents","Current Book Contents
Journal title
ADVANCES IN CONDENSED MATTER AND MATERIALS RESEARCH, VOL 1 → ACNP
Year of publication
2001
Pages
135 - 200
Database
ISI
SICI code