CONTROL OF THE MORPHOLOGY OF N-TYPE POROUS SILICON

Authors
BUCHIN EY PROKAZNIKOV AV
Citation
Ey. Buchin et Av. Prokaznikov, CONTROL OF THE MORPHOLOGY OF N-TYPE POROUS SILICON, Technical physics letters, 23(3), 1997, pp. 244-245
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
23
Issue
3
Year of publication
1997
Pages
244 - 245
Database
ISI
SICI code
1063-7850(1997)23:3<244:COTMON>2.0.ZU;2-F
Abstract
The morphology of layers obtained by anodic etching is related to the current-voltage characteristics of the electrolytic cell during the et ching. By etching at various points of the current-voltage characteris tic one can obtain porous silicon with various structures. (C) 1997 Am erican Institute of Physics.