Cb. Peng et al., Determination of optical constants of thin films and multilayer stacks by use of concurrent reflectance, transmittance, and ellipsometric measurements, APPL OPTICS, 40(28), 2001, pp. 5088-5099
Using measurements of reflectance, transmittance, and the ellipsometric par
ameter Delta, we have determined the thickness, refractive index, and the a
bsorption coefficient of various thin films and thin-film stacks. (Delta, t
he relative phase between the p- and s-polarized components, is measured fo
r both reflected and transmitted light.) These optical measurements are per
formed with a specially designed system at the fixed wavelength of lambda =
633 nm over the 10 degrees -75 degrees range of angles of incidence, The e
xamined samples, prepared by means of sputtering on fused-silica substrates
, consist of monolayers and trilayers of various materials of differing thi
ckness and optical constants. These samples, which are representative of th
e media of rewritable phase-change optical disks, include a dielectric mixt
ure of ZnS and SiO2, an amorphous film of the Ge2Sb2.3Te5 alloy, and an alu
minum chromium alloy film. To avoid complications arising from reflection a
nd transmission losses at the air-substrate interface, the samples are imme
rsed in an index-matching fluid that eliminates the contributions of the su
bstrate to reflected and transmitted light. A computer program estimates th
e unknown parameters of the film(s) by matching the experimental data to th
eoretically calculated values. Although our system can be used for measurem
ents over a broad range of wavelengths, we describe only the results obtain
ed at lambda = 633 nm. (C) 2001 Optical Society of America.