J. Wang et al., Modified Airy function method for modeling of direct tunneling current in metal-oxide-semiconductor structures, APPL PHYS L, 79(12), 2001, pp. 1831-1833
Using a modified Airy function (MAF) to solve the Schrodinger equation in t
he whole metaloxide-semiconductor structure, a fully quantum-mechanical mod
el of direct tunneling current from an inverted p-Si substrate through ultr
athin oxides is presented. The effects of tunneling on the electrostatic po
tential and the distribution of electrons are also included when self-consi
stently solving the Schrodinger and Poisson equations in silicon. Due to th
e semianalytical nature of the MAF method, the model has Iii-h efficiency.
Model results are compared with experimental data and show excellent agreem
ent. Moreover, an approximately linear relationship between the logarithm o
f the direct tunneling current and oxide thickness is found out. (C) 2001 A
merican Institute of Physics.