Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy

The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. I nP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The imp act of the III/V ratio, crystallographic orientation of implanted lines, an d implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible di rections. The results of this work could be used for the fabrication of fut ure optoelectronic integrated circuits, which would include nanoscale struc tures, e.g., quantum-wire optical devices with GaAs electronic circuits. (C ) 2001 American Institute of Physics.