Influence of deep level impurities on the conductance technique for the determination of series resistance of a Schottky contact

Citation
S. Sanyal et P. Chattopadhyay, Influence of deep level impurities on the conductance technique for the determination of series resistance of a Schottky contact, APPL SURF S, 181(1-2), 2001, pp. 15-18
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
181
Issue
1-2
Year of publication
2001
Pages
15 - 18
Database
ISI
SICI code
0169-4332(20010903)181:1-2<15:IODLIO>2.0.ZU;2-5
Abstract
The well-known conductance technique for the determination of series resist ance of a Schottky contact has been reevaluated in the light of a bulk defe ct model and considering the recombination current. The analysis reveals th e limitation of the conventional evaluation scheme. The estimated values of the series resistance using such scheme vary considerably as the energy le vel of the defect is varied. In order to overcome this limitation, a modifi ed conductance technique has been proposed with which the series resistance can be estimated accurately and has been found almost independent of the v alues of the defect energy level. (C) 2001 Elsevier Science B.V. All rights reserved.