Random-field Ising-type transition of pure and doped SBN from the relaxor into the ferroelectric state

Citation
J. Dec et al., Random-field Ising-type transition of pure and doped SBN from the relaxor into the ferroelectric state, EUROPH LETT, 55(6), 2001, pp. 781-787
Citations number
32
Categorie Soggetti
Physics
Journal title
EUROPHYSICS LETTERS
ISSN journal
02955075 → ACNP
Volume
55
Issue
6
Year of publication
2001
Pages
781 - 787
Database
ISI
SICI code
0295-5075(200109)55:6<781:RITOPA>2.0.ZU;2-0
Abstract
Activated critical dynamics and vanishing of the susceptibility ratio alpha (3)=chi (3)/chi (4)(1)-->0 in the zero-frequency limit unequivocally evide nce the phase transitions of the uniaxial relaxor crystals SBN, SBN: Ce and SBN: Cr to refer to the three-dimensional random-field Ising universality class. The relaxor-like freezing of polar nanoregions within the precursor regime is successfully described within the framework of the mesoscopic uni axial spherical random-bond random-field model.