J. Dec et al., Random-field Ising-type transition of pure and doped SBN from the relaxor into the ferroelectric state, EUROPH LETT, 55(6), 2001, pp. 781-787
Activated critical dynamics and vanishing of the susceptibility ratio alpha
(3)=chi (3)/chi (4)(1)-->0 in the zero-frequency limit unequivocally evide
nce the phase transitions of the uniaxial relaxor crystals SBN, SBN: Ce and
SBN: Cr to refer to the three-dimensional random-field Ising universality
class. The relaxor-like freezing of polar nanoregions within the precursor
regime is successfully described within the framework of the mesoscopic uni
axial spherical random-bond random-field model.