Highest efficiency, linear X-band performance using InP DHBTs-48% PAE at 30 dB C/IM3

InP single heterojunction bipolar transistors have previously demonstrated 5-10 dB lower third-order intermodulation products (IM3) compared to GaAs h eterojunction bipolar transistors (HBTs) under low voltage (2 V) operation [1]. This paper reports excellent single-tone and two-tone X-band operation , including high two-tone power-added efficiency (PAE), on linear InP doubl e heterojunction bipolar transistors (DHBTs) operated at V-ce = 4 V. The In P DHBT demonstrated a 30 dB carrier to third-order intermodulation product (C/IM3) output power ratio simultaneously with 48% two-tone PAE. This is th e highest known efficiency of an X-band device under linear (30 dB C/IM3) o peration. This is especially significant for microwave power amplifiers for satellite communication transmitters, where lower intermodulation distorti on is normally accomplished by backing off in RF drive and output power, th us sacrificing PAE performance.