All-metal high-isolation series and series/shunt MEMS switches

Citation
Jb. Muldavin et Gm. Rebeiz, All-metal high-isolation series and series/shunt MEMS switches, IEEE MICR W, 11(9), 2001, pp. 373-375
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
ISSN journal
15311309 → ACNP
Volume
11
Issue
9
Year of publication
2001
Pages
373 - 375
Database
ISI
SICI code
1531-1309(200109)11:9<373:AHSASM>2.0.ZU;2-2
Abstract
This paper presents a novel all-metal series switch with several different pull-down electrode geometries. The switch results in an up-state capacitan ce of 5-9 fF and an isolation of - 25 to -30 dB at 10 GHz. The fabrication process is completely compatible with the standard capacitive (or de-contac t) shunt switch. A dc-40 GHz series/shunt switch is also presented with an isolation of -60 dB at 5 GHz and -42 dB at 10 GHz. This is the highest isol ation switch available to-date. The performance is limited by radiation in the CPW lines and not by the series/shunt switch characteristics. The appli cation areas are in high-isolation switches for basestations and satellite systems.