Aa. Bykov et al., Anisotropy of magnetic transport and self-organization of corrugated heterointerfaces in selectively doped structures on GaAs(100) substrates, JETP LETTER, 74(3), 2001, pp. 164-167
The anisotropy of the longitudinal magnetoresistance has been found for a t
wo-dimensional electron gas with a high mobility and concentration in GaAs
quantum wells grown by molecular beam epitaxy on GaAs(100) substrates. The
experimental data obtained are explained by the self-organization of spatia
lly modulated heterointerfaces and are in agreement with the results of stu
dying growth surfaces by atomic force microscopy. (C) 2001 MAIK "Nauka/ Int
erperiodica".