Anisotropy of magnetic transport and self-organization of corrugated heterointerfaces in selectively doped structures on GaAs(100) substrates

Citation
Aa. Bykov et al., Anisotropy of magnetic transport and self-organization of corrugated heterointerfaces in selectively doped structures on GaAs(100) substrates, JETP LETTER, 74(3), 2001, pp. 164-167
Citations number
11
Categorie Soggetti
Physics
Journal title
JETP LETTERS
ISSN journal
00213640 → ACNP
Volume
74
Issue
3
Year of publication
2001
Pages
164 - 167
Database
ISI
SICI code
0021-3640(2001)74:3<164:AOMTAS>2.0.ZU;2-P
Abstract
The anisotropy of the longitudinal magnetoresistance has been found for a t wo-dimensional electron gas with a high mobility and concentration in GaAs quantum wells grown by molecular beam epitaxy on GaAs(100) substrates. The experimental data obtained are explained by the self-organization of spatia lly modulated heterointerfaces and are in agreement with the results of stu dying growth surfaces by atomic force microscopy. (C) 2001 MAIK "Nauka/ Int erperiodica".