Structural changes induced by fast nitrogen ions in GaAs single crystals

The influence of the implantation with fast nitrogen ions on GaAs single cr ystal structure is studied by several methods. The energy of nitrogen ions was 2.85 MeV/n and the dose was 5X10(14) cm(-2). The scanning electron micr oscopy experiments have revealed that a damaged buried laver was created at a depth of 20 mum. The mathematical analysis of reciprocal space maps has shown that the N2+ ion shot-through layers are only slightly deformed, wher eas larger deformations, consisting in the existence of small areas of larg er lattice parameter and local bending, are induced in the implanted part o f the crystal. (C) 2001 Elsevier Science BV All rights reserved.