Strain in hydrogen and oxygen implanted silicon and SOI structures annealed at high pressure

Effect of annealing up to 1400 K under argon pressure up to 1.2 GPa (HT-HP treatment) on silicon implanted with hydrogen (Si:H), oxygen (Si:O) and on silicon-on-insulator (SOI) structure was investigated by X-ray methods and transmission electron microscopy (TEM). The results obtained for the HT-HP treated samples were compared with that for the samples annealed at atmosph eric pressure (10(5) Pa). For Si:H and Si:O samples the HT-HP treatment inf luences strain state of the Si top laver much stronger than annealing at at mospheric pressure. The pressure treatment prohibits the hydrogen diffusion towards the surface region. The as-bonded SOI structures indicated presenc e of hydrogen and defects. The mosaic-like structure with high defect conce ntration was observed also for SOI treated at 1370 K-1.2 GPa, while anneali ng at 10(5) Pa resulted in improved perfection of the Si top laver. (C) 200 1 Elsevier Science BY. All rights reserved.