Synchrotron studies of implanted InxGa1-xAs

MOCVD grown epitaxial layers of In0.53Ga0.47As/InP were implanted with 1.5 MeV Se ions or 1.0 MeV Si ions at room temperature and at liquid nitrogen t emperature. A wide range of ion doses exceeding 10(15) ions/cm(2) was appli ed. White beam synchrotron section and projection topography as well as roc king curve measurements were used for the characterisation of samples. The aim of the experiment was the evaluation of the dose dependence of ion impl antation induced strain and the determination of amorphisation threshold. I t was found that the implantation performed at room temperature did not cau se lattice amorphisation even for highest applied doses, i.e. 2 x 10(15) Se /cm(2). The strain induced by 1.5 MeV Se ions implantation at room temperat ure increases with the ion dose and reaches its maximum for 3 X 10(14) ions /cm(2). Further increase of the dose resulted in the decrease of the strain . Ion implantation performed at liquid nitrogen temperature led to amorphis ation of the sample at doses of the order of 10(13) ions/cm(2). The amorphi sation manifested itself in the significant decrease of the implanted layer maximum in the rocking curve. A strain modulation fringes characteristic f or non-monotonic strain profiles were observed in some Bragg-case section t opographs. (C) 2001 Elsevier Science BY All rights reserved.