Microdefects and nonstoichiometry level in GaAs : Si/GaAs films grown by liquid-phase epitaxy method

GaAs:Si/GaAs films heavily doped with Si were investigated by complex metho ds including X-ray diffractometrical measurement of diffraction maximum int egral intensity for a quasi-forbidden reflection of the continuous spectrum wavelengths permitting determination of defect structure parameters. i.e. mean radius and concentration of precipitates and chemical composition viol ation (level of nonstoichiometry), as well as second ion mass spectroscopy (SIMS), measurements of electrophysical parameters. The level of nonstoichi ometry was shown to depend on parameters of defect structure. The conclusio n was drawn about interaction on point defects with precipitates enriched w ith silicon atoms. (C) 2001 Published by Elsevier Science B.V.