Extended defect structure induced by pulsed laser annealing in Ge implanted Si crystal

The study of extended defects structure induced by the pulsed nanosecond ra diation of an excimer laser with different energy density in Si single crys tal implanted with Ge ions. Numerical calculations were done to determine t he optimal value of the laser energy density causing the epitaxial recrysta llization from the melt on a crystal substrate. The RBS were performed to s tudy the near-surface structure of the different areas of the sample. The s urface morphology was observed using the interference-polarizing microscope . Through the application of the section X-ray topography we have observed the crystal lattice deformation caused by laser annealing. (C) 2001 Elsevie r Science B.V. All rights reserved.