Intermetallic growth of wire-bond at 175 degrees C high temperature aging

Citation
Hs. Chang et al., Intermetallic growth of wire-bond at 175 degrees C high temperature aging, J ELEC MAT, 30(9), 2001, pp. 1171-1177
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
30
Issue
9
Year of publication
2001
Pages
1171 - 1177
Database
ISI
SICI code
0361-5235(200109)30:9<1171:IGOWA1>2.0.ZU;2-0
Abstract
Two types of samples were applied in this wire-bond evaluation work for an Al-pad diffusion process. One was finished product for the cross-section ex amination of wire-bond and the other was without compound encapsulant used for the plane view examination of wire-bond interface. These samples were a ged at 175 degreesC in air from 0 h to 1008 h. It is found that the normal product which was ready on board existed similar to1 mum Au2Al and Au5Al2 p hases. The Au2Al phase was then transformed to Au5Al2 phase in a 4 similar to 72 h aging period. The Au4Al phase formed along with the Au5Al2 phase in 72 h to 240 h aging period showing some porosity within the reacted phases . The total phase thickness increased to similar to4 mum after 240 h aging. The Au4Al phase became the major phase after 336 aging h. The reacted phas e layer thickness increased to similar to6 mum and reached the steady state . A titanium-rich thin layer was also induced within the reacted phase laye r. Three ternary phases as AlAu2Ti, AlAuTi, and Al2Au2Ti are found in this titanium-rich layer. In particular, Al2Au2Ti could be a new phase.