The temperature dependence of the DC resistivity of silver quantum dot self
-assembled 2D Langmuir monolayers was obtained. The films exhibit a metalli
c-like resistance at high temperatures (above 200 K), and a thermally activ
ated mechanism at intermediate temperatures (60-200 K) which strongly suppo
rts the model of a Mott-Hubbard band gap. The transition temperature from t
he metallic-like regime to the thermally activated regime was found to corr
elate with the activation barrier.