Blue light emission from confined excitons in SiC/SiO2 quantum wells and wires

Authors
de Sousa, JS Wang, H Farias, GA Freire, VN Silva, EF
Citation
Js. De Sousa et al., Blue light emission from confined excitons in SiC/SiO2 quantum wells and wires, J KOR PHYS, 39(3), 2001, pp. 443-446
Citations number
13
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
39
Issue
3
Year of publication
2001
Pages
443 - 446
Database
ISI
SICI code
0374-4884(200109)39:3<443:BLEFCE>2.0.ZU;2-Q
Abstract
We present a theoretical study on the behavior of confined exciton energies of single 3C-, 4H-, and 6H-SiC/SiO2 quantum wells and wires within an abru pt/nonabrupt interface picture. We find that differences between exciton en ergies in abrupt quantum wells and wires are very significant (up to simila r to 150 meV), depending on the polytype and the thickness of the nonabrupt , SiC/SiO2 interfaces. The exciton blueshift due to a 5 Angstrom wide nonab rupt interface is very strong (up to similar to 120 meV).