Interface-related effects on the confined excitons in GaAs/AlxGa1-xAs double quantum wells

Authors
Ferreira, EC da Costa, JAP Freire, JAK Freire, VN Farias, GA
Citation
Ec. Ferreira et al., Interface-related effects on the confined excitons in GaAs/AlxGa1-xAs double quantum wells, J KOR PHYS, 39(3), 2001, pp. 485-487
Citations number
13
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
39
Issue
3
Year of publication
2001
Pages
485 - 487
Database
ISI
SICI code
0374-4884(200109)39:3<485:IEOTCE>2.0.ZU;2-B
Abstract
The confinement of excitons in non-abrupt GaAs/AlxGa1-xAs double quantum we lls (DQW's) is studied. It is shown that the interface is responsible for a n enhancement of the exciton energy, which can be several tenths of meV in the case of GaAs/Al0.3Ga0.7As DQW's with thin wells/barriers (less than or equal to 50 Angstrom) and interface thicknesses of the order of two monolay ers. A displacement of the exciton energy peaks can be related to the inter facial asymmetry, which can be of the order of 30 meV if the normal interfa ce is two times larger than the inverted one.