Influence of strain on functional characteristics of nanoelectronic devices

Charge transport through the crystal lattice of a nanoelectronic device occ urs quantum mechanically. Incompatible elastic strain introduced during fab rication of a device modifies the lattice and, therefore, its functional ch aracteristics can be affected. In this article, a computational model for a ssessing this influence is described. Consequences of strain which are expe cted to be significant for model development are identified and the modific ations necessary in the Schrodinger equation, the governing equation for tr ansport, to account for strain are indicated. The densities of confined ele ctronic states which arise in a particular columnar SiGe device configurati on are determined for a range of column diameters by means of the numerical finite element method, providing a quantitative illustration of the influe nce of strain on device characteristics. (C) 2001 Elsevier Science Ltd. All rights reserved.