Photoelectrochemical characterization of chemically deposited (CdS)(X)(Bi2S3)(1-X) composite thin films

Authors
Ahire, RR Sankapal, BR Lokhande, CD
Citation
Rr. Ahire et al., Photoelectrochemical characterization of chemically deposited (CdS)(X)(Bi2S3)(1-X) composite thin films, MATER CH PH, 72(1), 2001, pp. 48-55
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS CHEMISTRY AND PHYSICS
ISSN journal
02540584 → ACNP
Volume
72
Issue
1
Year of publication
2001
Pages
48 - 55
Database
ISI
SICI code
0254-0584(20011001)72:1<48:PCOCD(>2.0.ZU;2-E
Abstract
(CdS)(X)(Bi2S3)(1-X) composite thin films were chemically deposited using s imple successive ionic layer adsorption and reaction (SU-AR) method onto gl ass and fluorine doped tin oxide (FTO) coated glass substrates. The films w ere annealed in air at 200 degreesC for 2 hand used to fabricate photoelect rochemical cells of configuration: (CdS)(X)(Bi2S3)(1-X)/Na2S-S-NaOH/C and t heir properties, such as current-voltage (I-V), photovoltaic output, spectr al response, capacitance-voltage (Mott-Schotttty plots), etc. It is found t hat the (CdS)(X)(Bi2S3)(1-X) composite thin films are photoactive. The effe ct of composition 'X' on these properties was studied. (C) 2001 Elsevier Sc ience B.V. All rights reserved.