Polarography has been used as a tool for controlling the electropolishing o
f p-type Bi0.5Sb1.5Te3.0 and n-type Bi2Se0.3Te2.7:0.2 wt.% SbI3 semiconduct
ing materials used in thermoelectric coolers at particular current density
in terms of electropolished film thickness preceded by the electroetching o
f these materials in suitable electrolytes, by measuring the diffusion curr
ent for the reduction of Sb and Se ions at dropping mercury electrode (DME)
from electropolishing electrolytes for the p-type and n-type materials res
pectively. In addition, I-V measurements for correlating the current densit
y with the growth of the electropolished film for these n-type and p-type s
emiconductors have been carried out. (C) 2001 Elsevier Science B.V. All rig
hts reserved.