Preparation of platinum silicide films by pulsed laser deposition and pulsed laser annealing

Authors
Li, MC Chen, XK Cai, W Yin, JH Yang, JP Wu, G Zhao, LC
Citation
Mc. Li et al., Preparation of platinum silicide films by pulsed laser deposition and pulsed laser annealing, MATER CH PH, 72(1), 2001, pp. 85-87
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS CHEMISTRY AND PHYSICS
ISSN journal
02540584 → ACNP
Volume
72
Issue
1
Year of publication
2001
Pages
85 - 87
Database
ISI
SICI code
0254-0584(20011001)72:1<85:POPSFB>2.0.ZU;2-U
Abstract
The formation of PtSi ultra-thin films prepared by pulsed laser deposition during pulsed laser annealing has been studied. The growth sequence of the Pt2Si and the PtSi phases that evolved as the result of the diffusion react ion in the bilayers was examined by X-ray photoelectron spectroscopy (XPS) and the structure characteristics of PtSi were investigated by XPS. X-ray d iffraction (XRD) and atomic force microscopy (AFM). Superb uniformity of Pt Si films and smooth PtSi/Si interfaces were obtained by pulsed laser anneal ing. (C) 2001 Elsevier Science BN. All rights reserved.