Bonding structure of CNx films synthesized by nitrogen implantation into diamond films

The CNx films were synthesized by nitrogen ion (with the energy of 10 and 6 0 keV, respectively) implantation into diamond films. The bonding structure of the implanted films as well as diamond films was investigated using bot h Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). For the di amond film implanted by 10 keV nitrogen ions. Raman spectrum exhibits stron ger diamond peak at 1332cm(-1) and a weak graphitic peak(G band) at 1550cm( -1), whileN 1s XPS data show two main peaks at similar to 398.5 and 400.0 e V, respectively. As for the diamond film implanted by 60 keV nitrogen ions, the dominant peak in N Is XPS spectrum locates at similar to 400.0 eV, Cor respondingly, the graphitic peak in Raman spectrum becomes pronounced. By c omparison with the Raman spectra, the assignments of C 1s and N 1s binding states in XPS for the implanted films are made, in which the peaks at simil ar to 285.9 and 400.0 eV are attributed to C-N sp(2) bonding, whereas the p eaks at similar to 287.8 and 398.5 eV are ascribed to C-N sp(3) bonding. (C ) 2001 Elsevier Science B.V. All rights reserved.