Preparation and characterization of nickel sulphide thin films using successive ionic layer adsorption and reaction (SILAR) method

Authors
Sartale, SD Lokhande, CD
Citation
Sd. Sartale et Cd. Lokhande, Preparation and characterization of nickel sulphide thin films using successive ionic layer adsorption and reaction (SILAR) method, MATER CH PH, 72(1), 2001, pp. 101-104
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS CHEMISTRY AND PHYSICS
ISSN journal
02540584 → ACNP
Volume
72
Issue
1
Year of publication
2001
Pages
101 - 104
Database
ISI
SICI code
0254-0584(20011001)72:1<101:PACONS>2.0.ZU;2-O
Abstract
Semiconducting nickel sulphide (NiS) thin films were deposited onto glass, fluorine doped tin oxide (FTO) coated glass and single crystal Si(1 1 1) wa fer substrates using a new successive ionic layer adsorption and reaction ( SILAR) method. The deposition conditions for obtaining good quality films s uch as concentration, pH and temperature of cationic and anionic precursor solutions, immersion and rinsing times and number of immersions were optimi zed. The XRD studies show that the crystallinity of Nis thin films depends on the nature of substrate. The optical band gap and activation energy were found to be 0.45 and 0.15 eV, respectively. Thermo-emf measurement reveale d that the films are of p-type semiconductors. (C) 2001 Elsevier Science B. V. All rights reserved.