Photoacoustic (PA) spectra were made on Sb-doped ZnSe samples grown by meta
lorganic vapor phase epitaxy (MOVPE). The samples deposited at a low temper
ature under irradiation show the PA spectrum with a sharp edge near the ban
d gap and with three distinct peaks. From the Sb flow rate dependence of PA
peaks, two of them seem to be related to Sb impurities. Non-doped sample s
hows only one peak, which is tentatively ascribed to the deep level associa
ted with Se defects. (C) 2001 Elsevier Science B.V. All rights reserved.