Metal or metal-oxide nanocrystals can be formed by the gas deposition metho
d. Here we report a modified.-as deposition method, by which nanocrystals o
f metal oxides are synthesized at first, and transformed into metal nanocry
stals by heating the carrying gas. By controlling the heating temperature w
e can selectively deposit either dielectric films or conductive films in th
e same deposition process. Demonstrative experiments for transforming Al2O3
nanocrystals into At nanocrystals are shown.