120-nm lithography using off-axis TIR holography and 364 nm exposure wavelength

Citation
M. Barge et al., 120-nm lithography using off-axis TIR holography and 364 nm exposure wavelength, MICROEL ENG, 57-8, 2001, pp. 59-63
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
57-8
Year of publication
2001
Pages
59 - 63
Database
ISI
SICI code
0167-9317(200109)57-8:<59:1LUOTH>2.0.ZU;2-Y
Abstract
An extension of total internal reflection holographic lithography is presen ted that nearly doubles its resolution limit for patterns that are periodic or quasi-periodic in one direction. An off-axis object beam is employed to record the hologram from the photomask, the angle of the beam being such t hat essentially just the zero order and a first diffraction order are trans mitted by the mask. A fully automated equipment based on this method has be en developed which also implements a step-and-repeat procedure to enable a large array of patterns to be recorded in the hologram from a single patter n in the mask. Gratings and patterns with substantial deviations from the p ure grating form, with resolutions down to 120 nm, have been printed using an exposure wavelength of 364 nm. (C) 2001 Elsevier Science B.V. All rights reserved.