Design rules for lateral pn-junction detectors have been established and ve
rified by numerical simulations and measurements of the detector efficiency
for different geometries. The test devices were fabricated by diffusion of
phosphorus into boron-doped silicon substrates. The efficiency was measure
d by direct electron irradiation in a scanning electron microscope. EBIC im
aging was used to obtain the depletion layer width used for calculating the
upper limit of the efficiency for the given geometries. All experimental v
alues agree well with the theoretical predictions. It is demonstrated that
the efficiency of lateral pn-junction detectors can be improved without red
uction of the bandwidth. (C) 2001 Elsevier Science B.V. All rights reserved
.