Influence of the scattered electrons at the mask in a projection lithography system

Authors
Kotera, M Ishida, Y Naruse, K Sakai, M Tomo, Y Simizu, I Yoshida, A Kojima, Y Yamabe, M
Citation
M. Kotera et al., Influence of the scattered electrons at the mask in a projection lithography system, MICROEL ENG, 57-8, 2001, pp. 247-254
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
57-8
Year of publication
2001
Pages
247 - 254
Database
ISI
SICI code
0167-9317(200109)57-8:<247:IOTSEA>2.0.ZU;2-#
Abstract
Monte Carlo simulation of electron scattering in the EPL mask is introduced . Firstly, the validity of the results obtained is confirmed by a compariso n with experimental result. Secondly, as the application of the simulation, the longitudinal and the transverse Coulomb effects among image forming el ectrons and the scattered electrons at the mask are quantified in the cell- projection optical system. (C) 2001 Elsevier Science B.V. All rights reserv ed.