Hybrid deep UV-e-beam lithography for the fabrication of dual damascene structures

Authors
Mollard, J Tedesco, S Dal'zotto, B Jaubert, V Pain, L Fanget, G Comboroure, C Morand, Y Fayolle, M
Citation
J. Mollard et al., Hybrid deep UV-e-beam lithography for the fabrication of dual damascene structures, MICROEL ENG, 57-8, 2001, pp. 269-275
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
57-8
Year of publication
2001
Pages
269 - 275
Database
ISI
SICI code
0167-9317(200109)57-8:<269:HDULFT>2.0.ZU;2-O
Abstract
Today, the limiting factor for device performance is the transition time of a signal in an IC. A key challenge for 0.1-mum technology is the interconn ect delay, which can be reduced by the introduction of low-k dielectric and copper. The integration of these interconnects need new lithographic strat egies due to problems they entail. Therefore this paper deals with some iss ues encountered during the hybrid lithography (e-beam-DUV) process for the Trench First dual damascene structures. (C) 2001 Elsevier Science B.V. All rights reserved.