Simulation of latent image formation for ion beam projection lithography

For proper exposure of ion sensitive polymeric resists of thickness 400-500 nm light ions (H+, He+, Li+, Be+ and B+) with energies in the range 60-100 kV are necessary. Characteristic data concerning the penetration of these ions in polymer resists (transverse and lateral ranges, their dispersions, electronic and nuclear stopping powers etc.) calculated using the code TRIM are presented and discussed. Indications for the predominant role of the e lectronic losses under these conditions are used. Issues related to the use of chemically amplified resists (CAR's) for ion submicron micro structurin g of integrated circuits are discussed. Some requirements and peculiarities of the mask needed for a projection ion lithography system, defined from t he point of view of defect generation during its production and exploitatio n are also shortly discussed. (C) 2001 Elsevier Science BY All rights reser ved.