Comprehensive simulation of electron-beam lithography processes using PROLITH/3D and TEMPTATION software tools

A single software tool does not yet exist that is capable of modeling all p rocesses of the complex physical mechanisms and chemical reactions involved in electron-beam (e-beam) patterning. In this paper, we present a comprehe nsive simulation approach for the entire e-beam lithography process. This i s possible by combining the simulation strengths of the TEMPTATION (tempera ture simulation) and PROLITH/3D Software tools. Compatibility of the two so ftware tools was developed by marching internal formats of intermediate sim ulation data. A simulation stream involved the Monte Carlo simulation of a single-point energy distribution, proximity effects, local temperature rise and corresponding change of resist sensitivity, absorbed energy in exposur e of a pattern at a given condition, postexposure bake, acid diffusion in t he resist and resist development. The simulation was followed by an analysi s of the resulting resist profile, including critical dimensions, wall slop e and residual resist thickness. Examples of simulations are presented that demonstrated the use of this comprehensive simulation approach. (C) 2001 P ublished by Elsevier Science B.V.