Low temperature nanoimprint lithography using silicon nitride molds

Citation
Mm. Alkaisi et al., Low temperature nanoimprint lithography using silicon nitride molds, MICROEL ENG, 57-8, 2001, pp. 367-373
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
57-8
Year of publication
2001
Pages
367 - 373
Database
ISI
SICI code
0167-9317(200109)57-8:<367:LTNLUS>2.0.ZU;2-5
Abstract
Nanoimprint lithography has been performed at low temperatures using low st ress chemical vapour deposited silicon nitride (SixNy) as a mold material, with no sticking problems and hence no need for a release agent or surfacta nt. Imprint temperature, and the effect of quenching have been investigated and it is found that temperatures as low as 50 degreesC can be used succes sfully for imprint. Imprint profile due to resist overflow at these tempera tures is discussed. Low temperature imprint is important for patterning sub strates or polymer-based materials that are intolerant to high temperatures . A low temperature process could also be an advantage for alignment when t he mold and substrate have different thermal expansion coefficients. (C) 20 01 Elsevier Science B.V. All rights reserved.