Fabrication of quantum point contacts and quantum dots by imprint lithography

We demonstrate the integration of imprint lithography into nanoelectronic d evice fabrication. The gates of quantum point contacts and quantum dots wer e patterned by imprint lithography. A Si mold with the gate pattern is embo ssed into a PMMA film located on top of the GaAs/AlGaAs heterostructure. Th e Schottky gates are fabricated by metal evaporation and lift-off. The gate tip separation ranges from 120 to 600 mn for the quantum point contacts an d from 100 to 1000 mn for the quantum dots. Transport studies performed at T = 4.2 K show conductance quantization with varying gate voltages for the split-gate quantum point contacts and the upper and lower split-gates of th e quantum dot. (C) 2001 Elsevier Science BY All rights reserved.