Mask blank fabrication, pattern transfer, and mounting distortion simulations for the 8-in. format SCALPEL mask

Authors
Dicks, G Engelstad, R Lovell, E Liddle, J
Citation
G. Dicks et al., Mask blank fabrication, pattern transfer, and mounting distortion simulations for the 8-in. format SCALPEL mask, MICROEL ENG, 57-8, 2001, pp. 433-438
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
57-8
Year of publication
2001
Pages
433 - 438
Database
ISI
SICI code
0167-9317(200109)57-8:<433:MBFPTA>2.0.ZU;2-A
Abstract
The electron-beam projection lithography technique known as scattering with angular limitation projection electron-beam lithography (SCALPEL) is capab le of producing linewidths of 100 nm and smaller, making it a leading candi date for replacing the current lithographic technique, deep ultraviolet (DU V). Critical to the success of SCALPEL is the creation of a low-distortion mask. Finite element modeling allows for the efficient identification of pa ttern-specific distortions of the mask membrane. Results pertinent to the c urrent design of the 8-in. format mask are presented. (C) 2001 Elsevier Sci ence BY All rights reserved.