Modeling mask fabrication and pattern transfer distortions for EPL stencilmasks

Electron-beam stencil lithography, a next-generation lithography technology planned for the sub-100 mn nodes, requires the manufacture of a low distor tion mask. Fabrication and pattern transfer processes were modeled for the 4-inch format mask using finite element simulations. A comparison of patter n transfer distortions between the wafer flow and the membrane flow process was conducted. Sensitivity to the stress level of the membrane layers was also investigated. In-plane and out-of-plane distortions were reported for each step in the fabrication process, utilizing the IBM Falcon pattern form at. (C) 2001 Elsevier Science BY All rights reserved.