Submicron image reversal by liquid phase deposition of oxide

Authors
Niskanen, AJ Franssila, S
Citation
Aj. Niskanen et S. Franssila, Submicron image reversal by liquid phase deposition of oxide, MICROEL ENG, 57-8, 2001, pp. 629-632
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
57-8
Year of publication
2001
Pages
629 - 632
Database
ISI
SICI code
0167-9317(200109)57-8:<629:SIRBLP>2.0.ZU;2-8
Abstract
A method for reversing the polarity of a photoresist mask is presented. A s ilicon dioxide mask formed by selective liquid phase deposition reproduces the features defined in photoresist with submicron accuracy. The method is demonstrated with photoresist patterns thinned to 200 nm line width with ox ygen plasma, thus extending the applicability of plasma thinning from light -field structures (lines and dots) to dark-field structures (trenches and h oles). (C) 2001 Elsevier Science BY. All rights reserved.