Metrology method for the correlation of line edge roughness for different resists before and after etch

This paper proposes a methodology method to measure line edge roughness (LE R) using scanning electron microscopy (SEM) with LER and critical dimension (CD) variation software both for resist lines as well as for silicon lines . The method is based on the spatial frequency of the LER which means that the high- and low-frequency behaviour of LER can be evaluated. As an applic ation, different resists after litho and after polysilicon etch were compar ed. (C) 2001 Elsevier Science BY All rights reserved.