Exploring capabilities of electrical linewidth measurement (ELM) techniques

Citation
V. Rangelov et al., Exploring capabilities of electrical linewidth measurement (ELM) techniques, MICROEL ENG, 57-8, 2001, pp. 673-681
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
57-8
Year of publication
2001
Pages
673 - 681
Database
ISI
SICI code
0167-9317(200109)57-8:<673:ECOELM>2.0.ZU;2-Y
Abstract
In this paper, we have investigated the linearity of the electrical linewid th measurement, and the relation to the linewidth values measured with a CD -SEM. The collected data has shown an almost constant bias between ELM and SEM values tested down to 50 nm. A comparison between poly- and alpha -Si l ines with respect to different grain sizes was done. A further point of int erest was the influence of the geometry of a line (e.g. straight vs. bent), as well as the dependence of the ELM result with regard to a changing line width along its length. An overview of an error analysis for the whole expe rimental procedure is presented. (C) 2001 Elsevier Science BY All rights re served.