Analysis of pattern collapse of ArF excimer laser resist by direct peelingmethod with atomic force microscope tip

Quantitative analysis of the collapse property of dot resist pattern formed by ArF excimer laser lithography ranging from 141 to 405 rim diameter and 360 nm height is demonstrated experimentally. By directly applying a load t o a top corner of the resist pattern with a microcantilever tip, a resist d ot pattern adhering on a substrate can be collapsed easily accompanying sli ght residue formation. The load required for pattern collapse decreases wit h decreasing pattern diameter. In combination with an analysis of the inter nal stress distribution in the resist pattern, destruction mechanisms and t he diameter dependency of pattern collapse can be clarified. (C) 2001 Elsev ier Science BY. All rights reserved.