High precision mask fabrication for deep X-ray lithography using 40-kV shaped electron beam lithography

Citation
A. Schmidt et al., High precision mask fabrication for deep X-ray lithography using 40-kV shaped electron beam lithography, MICROEL ENG, 57-8, 2001, pp. 761-767
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
57-8
Year of publication
2001
Pages
761 - 767
Database
ISI
SICI code
0167-9317(200109)57-8:<761:HPMFFD>2.0.ZU;2-S
Abstract
Deep X-ray lithography is the primary process step of the LIGA technique, b y means of which high volume production of micro-mechanical, micro-optical and micro-fluidic components becomes possible. In order to produce appropri ate masks for deep X-ray lithography, several fabrication schemes can be ta ken into account. The most accurate and efficient fabrication process for L IGA masks is the structure transfer with soft X-ray lithography from an int ermediate mask pattern which is produced by direct electron beam writing. W e report on a new approach where the direct patterning of an intermediate m ask has been performed by an upgraded Leica ZBA shaped electron beam writer at 40 kV in order to achieve ultimate high throughput combined with superi or resolution. Optimised development and exposure processes as well as the use of proximity correction methods allowed to produce feature sizes down t o a 0.4 -2 mum resist layer. The results obtained so far have been analysed via a statistical 'design of experiment' method which is incorporated into a fully identified set of process parameters. Embedding this novel interme diate mask fabrication in the well established LIGA process, a cost effecti ve process environment meeting today's pattern transfer requirements is pro vided. (C) 2001 Elsevier Science BY All rights reserved.