Fabrication of GaN photonic crystals for 400 nm wavelength

We report on results of the fabrication and the micro-reflectance measureme nt of GaN photonic crystals. The etching performance of GaN has been studie d with a conventional reactive ion etching system and SiCl4 plasma. We obta ined an etch rate of 100 nm/min and etching depth of 600 nm for dense GaN p illars. With graphite lattice of 270 run period we observed a high reflecti on peak in the region of 400 nm wavelengths, depending strongly on the inci dent light polarization, which is in a good agreement with the theoretical calculation. (C) 2001 Elsevier Science B.V. All rights reserved.