In situ fabrication of vertical tunnel junctions for SET devices

Authors
Hofmann, K Spangenberg, B Kurz, H
Citation
K. Hofmann et al., In situ fabrication of vertical tunnel junctions for SET devices, MICROEL ENG, 57-8, 2001, pp. 851-856
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
57-8
Year of publication
2001
Pages
851 - 856
Database
ISI
SICI code
0167-9317(200109)57-8:<851:ISFOVT>2.0.ZU;2-A
Abstract
A modified fabrication technique for vertical metallic tunnel junctions is presented. This approach for metallic single electron transistors (SETs) is based on the in situ growth of Ti-TiOx-Ti layer stacks embedded between ch romium and gold contacts. The sequence of process steps as well as compleme ntary nanoanalytic investigations are presented and discussed within the fr ame of data obtained by electrical characterization. (C) 2001 Elsevier Scie nce B.V. All rights reserved.